CMOS Electronics articles & resources on Made-in-China.com

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

NREL and University of California Santa Barbara Have Developed a Wafer Bonding Technology

Jul 17, 2015

The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...

Tags: electronic components, semiconductor, TCO IZO Tandem solar cells

KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon

Jun 16, 2015

KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...

Tags: corrugated epitaxial, silicon

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Mar 24, 2015

Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate

Leti Is a Founding Member Initiative to Establish a Technology Platform

Mar 15, 2013

In booth 1136 at the Optical Fiber Communication Conference & Exposition/National Fiber Optic Engineers Conference (OFC/NFOEC 2013) at the Anaheim Convention Center, California (17–21 March), micro/nanotechnology R&D center CEA-Leti ...

Tags: Leti, Silicon Photonic Developments, OFC/NFOEC

CMOS Electronics

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

NREL and University of California Santa Barbara Have Developed a Wafer Bonding Technology

KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Leti Is a Founding Member Initiative to Establish a Technology Platform

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