DBR ALD MOCVD LEDs GaN

Researchers Have Developed an ALD Technique to Create DBR
Feb 17, 2013
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...

Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED