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Dynex Semiconductor
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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The UK's Capacity in Power Electronics Has Received an £18m Boost
Jul 8, 2013The UK's capacity in power electronics has received an £18m boost from the UK's Engineering and Physical Sciences Research Council (EPSRC) with the opening of the first EPSRC National Centre of Excellence for Power Electronics. As ...
Tags: Power electronics, Electrical, Electronics
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Dynex Semiconductor Has Officially Opened a New Lincoln-Based POUND1.8m R&D Centre
Dec 24, 2012Dynex Semiconductor has officially opened a new Lincoln-based £1.8m R&D centre as part of an £11.25m investment which will create up to 40 engineering jobs and safeguard its 315-strong workforce in the city. Dynex designs ...
Tags: R&D, Dynex Semiconductor, power semiconductor device, UK