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Fraunhofer IAF
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EU's INSIGHT Project To Develop III-V Nanowire-Based CMOS On Silicon System-on-Chip
Mar 9, 2016Future radar imaging systems and 5G communication systems will generate improved resolution and provide higher data-transmission rates when operated at higher frequencies, but at the cost of increased power consumption. To reduce power ...
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Fraunhofer Have Recently Achieved an Efficiency Level of 98%
Sep 13, 2013To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
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Germany-Based Researchers Claim a Record on-Current
Aug 27, 2013Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
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A European-Made Device Based on Gallium Nitride Will Be Sent Into Space
Apr 12, 2013The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
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Veeco Instruments Developed Electrical and Optical Devices
Mar 13, 2013Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the Fraunhofer Institute for Applied Solid State Physics (Fraunhofer-IAF) of Freiburg, Germany, which develops electrical and optical ...
Tags: Epitaxial deposition, Veeco Instruments, Fraunhofer-IAF
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GaN Technology Generated Significant Industry Interest Due to Its Performance Advantages
Jun 20, 2012Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
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Glasgow Has Been Chosen as The Location for The First UK Outpost
May 30, 2012The German organization for applied research finalizes a strategic collaboration with Scotland’s University of Strathclyde. £89M Technology and Innovation Centre As first reported by optics.org last November, Glasgow ...