ClassOne Technology of Kalispell, MT, USA (which manufactures electroplating and wet-chemical process systems for ≤200mm wafers) has announced a multi-tool sale of its flagship Solstice CopperMax electroplating system to China’s ...
Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...
Tags: integrated passive device, filters
After beginning volume production of its first bulk-CMOS radio frequency (RF) switch in 2008, Infineon Technologies AG of Munich, Germany has now reached an annual run-rate far exceeding 1 billion and a cumulative shipments of 5 billion RF ...
The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Qualcomm Technologies Inc, a subsidiary of Qualcomm Inc of San Diego, CA, USA, has announced radio-frequency front-end (RFFE) design wins with leading original equipment manufacturers (OEMs) including Google, HTC, LG, Samsung and Sony ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for multiple AIX 2800G4-TM MOCVD cluster tools from Chinese optoelectronic manufacturer Xiamen Changelight Co Ltd to expand its production ...
Tags: LED Capacity, cluster tools
SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...
Tags: SPTS, GaN-on-SiC, LED
Although the market for RF gallium arsenide (GaAs) devices (merchant and captive, but excluding foundry) rose by just 0.9% in 2016 as an anticipated drop in cellular revenue nearly offset gains in other market segments, revenue still ...
Tags: GaAs RF market, LTE
Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...
Tags: Thin-film PV, Glass Substrate
AXT Inc of Fremont, CA, USA - which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has completed the purchase of its new manufacturing facility in the city of Dingxing, China. ...
Tags: gallium arsenide, indium phosphide
SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won a ...
The US Department of Energy’s National Renewable Energy Laboratory (NREL), the Swiss Center for Electronics and Microtechnology CSEM (Centre Suisse d'Electronique et de Microtechnique) and EPFL (école Polytechnique ...
Tags: Solar Cell, Microtechnology
German luxury auto-brand Audi has signed a Memorandum of Understanding (MOU) with Hanergy Thin Film Power Group for cooperation on thin film solar cell technology in China. The thin film solar panels will be installed on the rooftops of ...
Tags: Audi, Electric Cars
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
Audi and Alta Devices of Sunnyvale, CA, USA (a subsidiary of solar-cell specialist Hanergy Thin Film Power) plan to cooperate on integrating solar cells into the panoramic glass roofs of cars, aiming to generate solar energy to increase the ...
Tags: Audi, Alta Devices, Car Roofs