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GaN Production
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MACOM Ships Millionth GaN-on-Si RF Power Device
Sep 11, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has now shipped more than 1 million gallium nitride on ...
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M/A-COM Has Launched Its Fourth Generation of GaN-on-Si Technology
May 14, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
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TriQuint Is The First to Achieve Manufacturing Readiness Level 9
Aug 20, 2014RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component
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TriQuint Semiconductor Reached a Defense Production Milestone
Aug 20, 2014RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reached a defense production milestone, completing the Defense Production Act Title III Gallium Nitride on Silicon Carbide (GaN ...
Tags: TriQuint, GaN, RF, GaN-on-SiC
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Ammono S.A. Conceived Proprietary New Technology
Apr 3, 2014Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
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RF Micro Devices Introduced What It Claims Are The World's First 6-Inch GaN-on-SiC Wafers
Sep 19, 2013RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
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Raytheon Has Been Honored by OSD
Jun 17, 2013Raytheon Company of Waltham, MA, USA has been honored by the Office of the Secretary of Defense (OSD) for successful completion of a Defense Production Act (DPA) Title III gallium nitride (GaN) production improvement program, culminating ...
Tags: GaN Production, Electrical
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LEDs Lend Themselves Well to The New Substrate
Aug 20, 2012Using GaN as a substrate holds promise for many industries,but has immediate applications for light-emitting diodes(LEDs),which Soraa manufactures.A major advancement in a commercially viable new substrate is a promising disruptive ...
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Soraa's Bulk GaN Substrates Development Is The Only Arpa-E Funded LED Substrate Project
Aug 10, 2012Soraa, dedicated in developing GaN solid-state lighting technology, has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on bulk GaN substrates development. It’s the only ARPA-E funded LED substrate ...
Tags: North America Soraa GaN Substrate DOE, Lights, Lighting
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Soraa Inc of Fremont Has Been Selected by The ARPA-E to Lead a Project
Aug 9, 2012Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
