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EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion

Oct 20, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...

Tags: gallium nitride, integrated circuits

Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

EPC Launches Wireless Power Demonstration Kits

Oct 10, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...

Tags: EPC, Wireless Power Demonstration

EPC Launches Class 4 Airfuel-Compliant Wireless Power Demonstration Kit Transmitting up to 33W

Aug 14, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...

Tags: eGaN FETs, amplifier

TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics

Jun 29, 2017

Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...

Tags: GaN Inverter, AC Servo Drives

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

Raytheon UK Develops Sic-Based High-Temperature Small-Form-Factor Power Module for Electrical Switching in Harsh Environments

Jul 16, 2016

Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...

Tags: Raytheon, Electrical Switching

Panasonic Showcases GaN-Based Technologies at PCIM Europe

May 23, 2016

At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...

Tags: GaN power devices, SiC

Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination

May 11, 2016

In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...

Tags: Power Module, Gate Driver

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

VisIc Launches 650V Half-Bridge Evaluation Board

Apr 15, 2016

VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...

Tags: GaN-on-Si power transistor

EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive

Apr 5, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...

Tags: EPC E-mode GaN FETs GaN-on-Si

EPC Publishes Second Edition of Wireless Power Handbook

Dec 16, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...

Tags: EPC, E-mode GaN FETs

VisIC Makes Available Evaluation Board and Samples for 650V GaN Power Switch

Nov 13, 2015

After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...

Tags: VisIC, transistor, semiconductor

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