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HEMT devices
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon
Nov 27, 2015Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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MACOM Introduces GaN Bias Controller and Sequence Module
Apr 7, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a gallium nitride (GaN) bias controller and ...
Tags: M/A-COM, semiconductors, Electronics
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Transphorm Announced The Introduction of Two Co-Branded 600v GaN Cascode Transistors
Mar 17, 2015At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: APEC 2015, GaN Power Devices
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CREE Launches Doherty PA Reference Design
Feb 2, 2015To address the needs of small-cell designers, Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the CDPA35045 asymmetric Doherty power amplifier (PA) reference design ...
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Element Six Aims to Extend Its R&D LED to The Third Consecutive Year of High Growth
Jan 23, 2015Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
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USA Is Enhancing Its Support of The European Market by Extending Its Partnership with APC
Aug 22, 2014Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
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Its Gallium Nitride (GaN)-on-Diamond Wafers Have Been Proven by Raytheon Company
May 15, 2014Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
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HKUST Is Developing Techniques to Monolithically Integrate HEMTs
Mar 24, 2014Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
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HKUST Developed a 600V GaN/Si Normally-Off MIS-HEMT
Oct 16, 2013Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
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CREE Licenses Gan Device Patents License Agreement with Transphorm
Aug 6, 2013, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
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Cree Has Signed a Non-Exclusive Worldwide Patent License Agreement with Transphorm
Aug 5, 2013Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...
Tags: Transphorm Cree, Electrical, Electronics
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TriQuint Semiconductor Makes and Distributes RF Components for Analog Wireless Networks
Jul 3, 2013RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
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Nitronex Developed a Family of Products
Jun 7, 2013Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...