- Location
InGaN Laser diodes
"-
Indium Gallium Nitride Laser Diode Directly Integrated with Silicon
Sep 9, 2016Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
-
Thin-Barrier Quantum Wells Increase Bandwidth of Cyan Light-Emitting Diode
Jun 21, 2016Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
-
Semi-Polar InGaN Laser Diodes
Apr 7, 2015University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
-
Osram Opto Launches Direct-Emitting Green Laser Diodes
Oct 18, 201218 October 2012 Osram Opto launches direct-emitting green laser diodes Osram Opto Semiconductors GmbH of Regensburg,Germany says that it is now offering its first direct-emitting green diode lasers.The two compact indium gallium ...