McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
22 June 2012 Sandia's InGaN nanowire template permits flexible solar energy absorption Researchers in solar energy want to convert as many of the sun's wavelengths as possible to achieve maximum efficiency.They hence see indium gallium ...
Tags: InGaN nanowire, solar energy, solar cell, MOCVD, photovoltaic systems