JFET articles & resources on Made-in-China.com

Raytheon UK and Newcastle University Produce SiC-Based Analog Circuitry for High-Temperature and Harsh-Environment Monitoring Applications

Apr 5, 2016

The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...

Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry

GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025

Mar 13, 2016

Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...

Tags: Semiconductor Market, GaN, SiC

Princeton Power Demonstrated a Grid-Tied Bi-Directional Power Converter for Commercial Use

Jun 16, 2015

Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...

Tags: SiC JFETs, Power Converter

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

Silicon Carbide Bipolar Opamp Performance at 500ºC

Aug 2, 2014

Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...

Tags: SiC SiC BJTs, Electrical, Electronics

German Project NeuLand Developed Highly Integrated Components and Electronic Circuits

Jul 10, 2014

Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...

Tags: Power electronics GaN-on-Si SiC

The Power Electronics Downturn in 2012 Was Quite Severe

May 29, 2013

Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...

Tags: Yole SiC, inverters

European Program Aimed at Developing a Cost-Effective and Reliable Technology

May 21, 2013

LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...

Tags: SiC, substrates GaN

GaN and SiC Power Semiconductors Is Forecast to Grow a Factor of 18

Apr 27, 2013

The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...

Tags: GaN Power, SiC Power, Lighting

SiC and GaN are Forecast to Grow a Remarkable Factor of 18 Over 10 Years

Apr 26, 2013

Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...

Tags: GaN power, semiconductor, SiC Power Semiconductor

SiC Has Announced The Availability of a Family of 1700V and 1200V SiC Junction Transistors

Feb 27, 2013

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, ...

Tags: GeneSiC, junction transistors, power system

Swiss IGBT Driver Manufacturer CT-Concept Is to Open Custom IGBT Driver Centre

Jan 16, 2013

Swiss IGBT driver manufacturer CT-Concept is to open custom design centre in Ense, Germany. It will develop semi-custom gate-drive designs based on its driver cores, and produce full-custom drivers using the firm's Scale-2 chipset for ...

Tags: IGBT driver, driver cores, chipset

Hexatech Was Spun off From The Department of Materials Science of North Carolina State

Dec 24, 2012

HexaTech Inc of Morrisville, NC, USA has received a $2.2m award from the US Department of Energy (DOE) Advanced Research Projects Agency – Energy (ARPA-E) to enable the development of “new power semiconductor technology for the ...

Tags: power semiconductor technology, Energy, electrical power grid

Antelope Audio Introduced Rubicon, World's First Atomic AD/DA Preamp

Dec 12, 2012

Antelope Audio, the manufacturer of state-of-the-art, high-end devices addressing the demands of the most discerning listeners, introduced Rubicon, world's first Atomic AD/DA Preamp, a sophisticated 384 kHz digital audio preamplifier which ...

Tags: high-end devices, Rubicon, high end consumer electronics enthusiasts

Semisouth Was Founded in 2001 by Former MSU

Nov 28, 2012

SemiSouth Laboratories Inc of Starkville, MS, USA, which designs and manufactures silicon carbide (SiC) devices for high-power, high-efficiency, harsh-environment power management and conversion applications, is to close down, according to ...

Tags: SemiSouth SiC, silicon carbide, CVD

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