Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...