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LEDs GaN InGaN MOCVD
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Researchers Have Demonstrated a Last Quantum Barrier Structure for InGaN
May 13, 2014Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED