LEDs GaN articles & resources on Made-in-China.com

Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers

Nov 19, 2015

Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...

Tags: AlGaN, ultraviolet lasers, LEDs

GaN Costs Will Drop Enough for It to Become Competitive Based on Performance Gains

Dec 24, 2012

Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...

Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market

Soraa's Bulk GaN Substrates Development Is The Only Arpa-E Funded LED Substrate Project

Aug 10, 2012

Soraa, dedicated in developing GaN solid-state lighting technology, has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on bulk GaN substrates development. It’s the only ARPA-E funded LED substrate ...

Tags: North America Soraa GaN Substrate DOE, Lights, Lighting

Seoul Semiconductor Launches Npola LED Technology to Boost Brightness 5-10 Times

Jul 5, 2012

Seoul Semiconductor launches nPola LED technology to boost brightness 5-10 times South Korean LED maker Seoul Semiconductor Co Ltd has unveiled a new LED product based on patented ‘nPola’ technology, which has been under ...

Tags: LEDs GaN

LEDs GaN

Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers

GaN Costs Will Drop Enough for It to Become Competitive Based on Performance Gains

Soraa's Bulk GaN Substrates Development Is The Only Arpa-E Funded LED Substrate Project

Seoul Semiconductor Launches Npola LED Technology to Boost Brightness 5-10 Times

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