Laser Structures articles & resources on Made-in-China.com

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers

Nov 19, 2015

Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...

Tags: AlGaN, ultraviolet lasers, LEDs

The First Semiconductor Laser Consisting Solely of Main Group IV Elements

Jan 22, 2015

In cooperation with international partners, Germany’s Forschungszentrum Jülich and the Paul Scherrer Institute (PSI) in Villigen, Switzerland have presented what is claimed to be the first semiconductor laser consisting solely of ...

Tags: Group-IV Lasers, clock signal, Electrical

UCSB Have Developed Wavelength INAS QD Lasers

Feb 21, 2014

University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...

Tags: Silicon, `Quantum Dot Lasers

MOVPE Growth of AlGaAs on GaAs Is Limited by Lattice Mismatch

Dec 20, 2013

It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...

Tags: Laser Structures, Electronics

HexaTech Demonstrated Optically Pumped,AlGaN-Based Lasers Grown on Highest-Quality

Feb 20, 2013

In a parallel effort to its development of UV-C light emitting diodes (LEDs), HexaTech recently demonstrated optically pumped, AlGaN-based lasers grown on highest-quality, single crystalline AlN substrates. Laser structures fabricated at ...

Tags: light, LEDs, laser

Prove Aln Substrate Platform for UV-C LEDs

Feb 9, 2013

HexaTech demonstrated optically pumped, AlGaN-based lasers grown on single crystalline AlN substrates , to develop its UV-C LEDs. Hexatech AlN wafer production process Laser structures fabricated at HexaTech and tested in ...

Tags: LEDs, UV-C LED, laser performance

HexaTech Pumped Algan-Based Lasers Grown on Single-Crystalline AIN Substrates

Feb 5, 2013

In a parallel effort to its development of UV-C light-emitting diodes (LEDs), HexaTech Inc of Morrisville, NC, USA recently demonstrated optically pumped AlGaN-based lasers grown on single-crystalline aluminium nitride (AlN) substrates. ...

Tags: HexaTech, LEDs, AlN substrates

LayTec AG of Berlin Opened Its New Training Center in Hsinchu

Jul 11, 2012

LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that on 21 June Challentech International Corp, its partner for sales ...

Tags: LayTec, Sales, Lighting

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