Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received an order for a Compact 21T MBE research system for delivery in 2016 to a laboratory in ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...
Tags: Electrical, Electronics
Texas State University (in San Marcos) has announced an agreement granting MicroPower Global Ltd (which was established in 2008 and is developing thermoelectric devices for energy conservation, energy harvesting and refrigeration) exclusive ...
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has sold a Compact 21 research MBE system to what it describes as a"world famous"research laboratory in ...
Tags: Photonic Crystals, MBE, Materials