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MOCVD process
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Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas
Jun 20, 2016Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
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IQE Equips Complete Fab with Laytec Tools for Mocvd Process Monitoring
Jun 15, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
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Aixtron Receives CS High-Volume Manufacturing Award For AIX G5+C GaN-on-Si MOCVD Production System
Mar 9, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
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Aixtron Selects Jordan Valley's QC3 HR-XRD System for MOCVD Process Metrology
Apr 3, 2015X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
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NAE Is Awarding The 2015 Charles Stark Draper Prize
Jan 9, 2015The US National Academy of Engineering (NAE) is awarding the 2015 Charles Stark Draper Prize for Engineering to Isamu Akasaki, M. George Craford, Russell Dupuis, Nick Holonyak Jr and Shuji Nakamura for “the invention, development, and ...
Tags: LED Lighting, diode applications, Electrical
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GaN Micro-Rods Grown on Graphene Yield Flexible LEDs
Sep 26, 2014Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...
Tags: LEDs, LED displays, Electrical, Electronics
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HKUST Is Developing Techniques to Monolithically Integrate HEMTs
Mar 24, 2014Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
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BluGlass Has Increased Its Operational Capacity
Nov 19, 2013Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
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Global Demand Will More Than Double From 2012 to 2016
Aug 9, 2013Global demand for precursor material used in manufacturing light-emitting diodes (LEDs) will more than double from 2012 to 2016 as the market for LED lighting booms, according to a new report 'Precursor for LED MOCVD-Market and Industry ...
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A Material Used in Manufacturing of LEDs, Is Set to More Than Double From 2012 to 2016
Aug 8, 2013Global demand for precursor, a material used in manufacturing of light-emitting diodes (LEDs), is set to more than double from 2012 to 2016, as the market for LED lighting booms, according to a new report entitled “Precursor for LED ...
Tags: Key Raw Material, LED Market
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Valence Process Equipment Undrapes New Mocvd System Gan-500
May 20, 2013Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE ...
Tags: LED industry, LED
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GT Announced a Development Agreement and a Licensing Agreement Allowing GT to Develop
Apr 11, 2013GT Advanced Technologies and Soitec , today announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on ...
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Is It Time for High-Brightness LED Manufacturing to Get Serious About Process Control?
Mar 13, 2013Is it time for high-brightness LED manufacturing to get serious about process control? If so, what lessons can be learned from traditional, silicon-based integrated circuit manufacturing? The answer to the first question can be ...
Tags: LED manufacturing, LED substrate, MOCVD
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BluGlass Has Produced P-Type Gallium Nitride Films
Mar 5, 2013Following its proof-of-concept achievement in late 2012, BluGlass Ltd of Silverwater, Australia says that it has produced p-type gallium nitride (GaN) films with industry-equivalent electrical properties using its proprietary ...
Tags: LED device, LED structure, LED
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The Higher Growth Rates and Improved Material Properties Are Expected to Reduce Costs
Mar 1, 2013The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment ...
Tags: HVPE system, process costs, device performance, MOCVD process
