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MOSFET
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ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys
Mar 2, 2018ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...
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ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team
Dec 5, 2017ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...
Tags: Power Modules, silicon carbide
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019
Sep 27, 2017“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
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Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device
Sep 25, 2017At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...
Tags: Power Device, Mitsubishi, SiC Mosfet
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SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month
Sep 18, 2017Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...
Tags: SiC power devices, semiconductors
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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
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Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology
May 25, 2017Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...
Tags: Analog Devices, GaN Power
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AgileSwitch to Be Awarded Patent for Augmented Turn-off SiC Module Switching Technique
Oct 12, 2016AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...
Tags: SiC MOSFET, AgileSwitch LLC
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Wolfspeed Launches First 1000V SiC MOSFET
Oct 12, 2016Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has introduced what it claims is the first 1000V MOSFET, which ...
Tags: Wolfspeed, 1000V SiC MOSFET
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VisIC Launches Low-Rds(on) 650v GaN Switch Product Line in Bottom-Side-Cooled Package for Switching up to 12A
Sep 9, 2016VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
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Boosting Transconductance in Indium Gallium Arsenide finFETs
Sep 6, 2016Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
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Mitsubishi Electric Launches Super-Mini Full-Sic Dipipm for Air Conditioners
Aug 19, 2016Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...
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IXYS Launches 1200v SiC Power Mosfets in SOT227 Minibloc Packages for Higher-Power Applications
Jul 27, 2016IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
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SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications
Jul 26, 2016When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
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