Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
Now, with the energy conservation, the environmental protection of the word was on the agenda, people about life concept also a shift in recent years has LED to rapid industry requirements and keep pace with The Times. In the energy ...
Tags: LED Display Screen, Indoor Display, Chipshow
ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced an array of new AEC-Q100-compliantintegrated circuits (ICs) optimized for implementation into next generation automobile designs. The NBA3N200/1/6S ...
Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the AL1678 family of LED Drivers. ...
Tags: Diodes, LED Lamps, LED drivers
Mitsubishi Motors North America today announced a new trim to the fuel-efficient 2015 Mirage, the Rockford Fosgate Edition. Already the most fuel-efficient, non-hybrid, gasoline powered vehicle available in America today with a combined ...
Infineon Technologies AG of Munich, Germany says that is the market leader in power semiconductors for the twelfth consecutive time. Following the firm's acquisition of International Rectifier at the beginning of 2015, Infineon has a market ...
Tags: power semiconductors, Electronics
Toshiba Corporation has introduced ‘TB9081FG’, a brushless motor pre-driver IC suited to be integrated with electric power steering systems (EPS) for achieving functional safety. The new IC integrates runs three-phase ...
Tags: Toshiba, Pre-Driver IC, Automotive EPS
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
US semiconductor firm Texas Instruments (TI) has launched a 120-V automotive grade half-bridge gate driver, touted to be the fastest in the sector, offering negative voltage handling capability on the high-side pin for hybrid vehicles. ...
Tags: semiconductor manufacture, auto accessories, Texas Instruments
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH ...
Tags: Power Conversion, Cree
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a gallium nitride (GaN) bias controller and ...
Tags: M/A-COM, semiconductors, Electronics
Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will ...
Tags: Vishay, APEC 2015, power MOSFET