MOSFETS articles & resources on Made-in-China.com

TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers

Mar 7, 2018

Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...

Tags: GaN Power, GaN FET Drivers

ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips

Sep 26, 2017

State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...

Tags: Power Electronics Chips, Suny Poly

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month

Sep 18, 2017

Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...

Tags: SiC power devices, semiconductors

Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica

Aug 23, 2017

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...

Tags: Microsemi, chips

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Mentor Graphics Joins Wide Band Gap Integration Power Electronics Consortium in Japan

Oct 12, 2016

Electronic hardware and software design and manufacturing solutions provider Mentor Graphics Corp of Wilsonville, OR, USA has joined the Wide Band Gap integration (WBGi) power electronics consortium to participate in thermal management and ...

Tags: Mentor Graphics, WBGi

AgileSwitch to Be Awarded Patent for Augmented Turn-off SiC Module Switching Technique

Oct 12, 2016

AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...

Tags: SiC MOSFET, AgileSwitch LLC

Wolfspeed Launches First 1000V SiC MOSFET

Oct 12, 2016

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has introduced what it claims is the first 1000V MOSFET, which ...

Tags: Wolfspeed, 1000V SiC MOSFET

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

Consumer Electronics Chargers to Comprise 30% of GaN Market in 2022

Sep 9, 2016

The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...

Tags: GaN power devices, Dialog Semiconductor plc

Boosting Transconductance in Indium Gallium Arsenide finFETs

Sep 6, 2016

Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...

Tags: MIT, finFETs

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