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results for "
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HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties
Jan 18, 2013Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
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HKUST Has Grown High-Performance Indium Gallium Arsenide (InGaAs) Metal
Dec 25, 2012Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...