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HfO2
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CNR-IMM Italy Using Sentech Peald System for New High-K Materials on Wide-Bandgap Devices
Oct 12, 2016SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
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Enhancing The Efficiency of White LEDs Via Reflection
Apr 21, 2016Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...
Tags: White LED Packaging
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Tokyo Institute of Technology Researchers Unravel Ferroelectric Properties in HfO2 Thin Films
Nov 12, 2015Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute of Technology ...
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High-Pressure Anneal for Indium Gallium Arsenide Transistors
Aug 10, 2015Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
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South Korea Developed a Gate Stack for III-V Quantum Well QW MOSFETs
May 9, 2014Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
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HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties
Jan 18, 2013Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
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MIT Have Presented The Shortest-Gate Working Transistors Yet Built Using III-V Channels
Dec 27, 2012Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
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HKUST Has Grown High-Performance Indium Gallium Arsenide (InGaAs) Metal
Dec 25, 2012Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
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