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Mechanical Polishing
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Mitsubishi Heavy Industries Machine Tool Collaborating with D-process on Room-Temperature Wafer Bonding Services
Sep 9, 2016Mitsubishi Heavy Industries Machine Tool Co Ltd of Ritto City, Shiga, Japan (founded in October 2015), a group company of Tokyo-based machinery maker Mitsubishi Heavy Industries Ltd (MHI), has agreed with D-process Inc of Yamato, Kanagawa, ...
Tags: Mitsubishi Heavy Industries, D-process, room-temperature wafer bonding
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Sodium Flux Route to Free-Standing Gallium Nitride Substrates
Jul 19, 2016Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold
Nov 9, 2015Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
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Increasing Carrier Lifetimes for High-Voltage Silicon Carbide
Sep 15, 2015Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
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Plasma Pre-Treatment for Gallium Nitride Chemical Mechanical Polishing
Sep 1, 2015Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
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NCSU Has Been Developing Homo-Epitaxy of Non-Polar AIN with a View to DUV
Oct 30, 2014North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
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AIT Develops a Series of Temporary Wax-Like Media
Oct 23, 2014AI Technology, Inc. (AIT) has recently developed a series of temporary wax-like media that has been proven to be useful in many of thinning applications, in particular for the dies and wafers of cell phones, cameras and tablets. ...
Tags: AI Technology, wax-like media
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Wafers and Substrates Are Thinned Down From as Much as 750um
Sep 9, 2014As devices such as cell phones, cameras, and tablets continue to shrink, there is also a big push to shrink the thickness of these devices, and hence the thickness of the dies and wafers, says AI Technology Inc (AIT) of Princeton Junction, ...
Tags: Bonding Wax, Back-Grinding
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UCSB Has Developed Semipolar Nitride Semiconductor Laser Diodes
Nov 26, 2013University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
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Electropolishing Is One Such Method That Smoothes and Streamlines Metal Surfaces
Jul 23, 2013Rust and stain-free finished metals are present in numerous objects we use. Washing machine drums, surgical devices, knives and any metallic object that has to be free of deformation, corrosion and minute tears needs to be cleaned and ...
Tags: Processing Machinery
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Know More About Thick-Walled Stainless Steel Tube Surface Treatment Process
Jun 14, 2013Thick wall stainless steel tube surface treatment processing problems in the process of weld defect is more serious, using manual mechanical polishing treatment methods to compensate, resulting in grinding marks, resulting in uneven surface ...
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European Program Aimed at Developing a Cost-Effective and Reliable Technology
May 21, 2013LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
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Researchers Have Been Developing Planarization Techniques for GaN Surfaces
Mar 20, 2013Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
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