Microwave Devices articles & resources on Made-in-China.com

Diamond Microwave Launches GaN X-Band Sspas with Integrated Monitoring and Protection

May 26, 2016

Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...

Tags: GaN-on-diamond, radar application

Diamond Microwave Launches 1kw Ultra-Compact Pulsed GaN X-Band SSPA

Sep 15, 2015

Exhibiting in Stand 250 at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has announced a ten-fold ...

Tags: EuMW 2015, GaN, Diamond Microwave

Microsanj Participated in Three Conferences During Microwave Week in Phoenix

May 26, 2015

Microsanj LLC of Santa Clara, CA, USA - a supplier of high-resolution, thermoreflectance imaging analysis (TIA) c, tools and consulting services - participated in three conferences during Microwave Week in Phoenix, Arizona. At the 2015 ...

Tags: TIA system, thermal imaging system

Diamond Microwave Re-Designed Its Range of Gan-Based Sspas Into a New Common Module Format

May 19, 2015

Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...

Tags: Diamond Microwave Devices, power amplifiers

Microsemi Offers RF,Microwave,and Millimeter-Wave Antenna-to-Bits Solutions

May 18, 2015

In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...

Tags: Microsemi, Microwave Devices

NSF Promotes an Interdisciplinary Approach to Address Fundamental Problems in Science

Jan 7, 2015

The Center for Nanoscale Science, a US National Science Foundation-funded Materials Research Science and Engineering Center (MRSEC) at Penn State University, has been awarded a six-year, $15m grant to continue research on materials at the ...

Tags: Nanoscale Science, materials research, Electrical

Diamond Microwave Devices Ltd of Leeds Is Extending Its Range of SSPAs

Jun 6, 2014

Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), is extending its range of ...

Tags: GaN-on-diamond, Diamond Microwave

Singapore's Nanyang Developed Conventional AlGaN High-Electron-Mobility Transistors

Apr 8, 2014

Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...

Tags: Electrical, Electronics

Diamond Microwave Has Launched an Ultra-Compact High-Power SSPA Operating

Aug 9, 2013

Diamond Microwave Devices Ltd of Leeds, UK, which was spun out in 2006 from the diamond electronics team of Element Six and specializes in gallium nitride (GaN)-based microwave solid-state power amplifiers (SSPAs), has launched an ...

Tags: GaN-on-diamond, Electrical, Electronics

TAEC Expanded Its GaN HEMT Lineup

Jun 6, 2013

Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...

Tags: Toshiba, Satcom Market

TAEC Added a 200W C-Band GaN HEMT to Its Power Amplifier Product Family

Jun 6, 2013

Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...

Tags: Toshiba, Power Amplifier

MwT Has Launched an AlGaAs/InGaAs pHEMT-based Monolithic Microwave Integrated Circuit

Jun 4, 2013

MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and ...

Tags: Amplifier, Electrical, Electronics, MicroWave Technology

MwT Would Make Microwave Devices

Dec 24, 2012

MicroWave Technology Inc (MwT) of Fremont, CA, USA, a subsidiary of IXYS Corp that makes microwave devices, MMICs, modules and subsystems for wireless communication infrastructure, defense, industrial and medical equipment applications, has ...

Tags: MwT, MMICs, GaAs, AlGaAs, pHEMT

Diamond Has Many Attractive Qualities for High-Power Devices

Sep 13, 2012

University of Glasgow and UniversitéParis researchers have demonstrated for the first time RF performance of 50nm gate-length diamond field-effect transistors(FETs)[Stephen A.O.Russell et al,IEEE Electron Device Letters,published ...

Tags: Diamond, Element Six, Electrical

Samples of The High-Gain GaAs FET Family Are Available Now

Jun 20, 2012

20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...

Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs

Microwave Devices

Related Products