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Mitsubishi Chemical
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Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes
Aug 26, 2016University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
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Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode
Aug 12, 2016University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
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GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022
Feb 29, 2016The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
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Technavio Profiles Top-Four Vendors in Packaged GaN LED Market for 2016-2020
Feb 18, 2016In its report 'Global Packaged Gallium Nitride (GaN) LED Market 2016-2020' – which forecasts a compound annual growth rate (CAGR) of more than 5% – market research firm Technavio has profiled the top four leading vendors (Cree ...
Tags: GaN LED, LED Market
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Hybrid Growth of Gallium Nitride Tunnel Junctions
Feb 14, 2016University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
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Mitsubishi Chemical, Pioneer Develop Bluelight-Free OLED Lighting Module
Nov 10, 2015Mitsubishi Chemical Corporation and Pioneer Corporation announced that MCC and Pioneer have successfully developed the first bluelight-less OLED lighting module made with a wet coating process for the light-emitting layer, and will begin ...
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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Review of Business Disputes Among LED Manufacturers Throughout 2015
Oct 14, 2015In general, LED Manufacturers performed quite well over the past eight months in 2015. But competition among LED manufacturers intensified through price wars, patent disputes and fighting over distribution channel were overwhelming. A ...
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InGaN LEDs with Thicker Active Regions Enabled by on The Semi-Polar (30-3-1) Plane
Nov 13, 2014University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
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UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers
Aug 20, 2014University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
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Intematix Brought Legal Action
Jun 12, 2014Intematix brought legal action in the Intellectual Property Tribunal of the Korean Intellectual Property Office on September 7, 2012 to invalidate the patent, but on April 30, 2013, the Tribunal dismissed the claim and ruled that the ...
Tags: Intellectual Property Tribunal, patent, patent infringement litigation
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Asian Paraxylene Buyers Placed Their Counterbids for June at $1,150-1,170/Mt CFR
Jun 3, 2014Asian paraxylene buyers placed their counterbids for June at $1,150-1,170/mt CFR, more than $100/mt lower than nominations for the Asian contract price, sources close to the negotiations said Thursday. There are four PX ACP sellers in ...
Tags: paraxylene, oil
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Counter Bids for May ACP for Paraxylene Were in a Range of $1,040-1, 100/Mt CFR
May 4, 2014Counter bids for May Asian Contract Price for paraxylene were in a range of $1,040-1,100/mt CFR, sources close to the negotiations said Tuesday. There are four PX ACP sellers in Asia -- ExxonMobil, Japan's Idemitsu Kosan and JX Nippon Oil ...
Tags: Paraxylene, PX ACP
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The Market Is Forecasted to Reach $15.6bn by 2022
Apr 10, 2014According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
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Asian Contract Price for Paraxylene Are Seen to Come in at Around $1,050-1,100/Mt CFR
Mar 31, 2014Counter bids for the April Asian Contract Price for paraxylene are seen to come in at around $1,050-1,100/mt CFR, sources close to the negotiations said Thursday. The four PX ACP sellers in Asia -- ExxonMobil, Japan's Idemitsu Kosan and ...
Tags: Paraxylene, PTA market, PTA producers