At the 20th China International Optoelectronic Exposition (CIOE 2018) in Shenzhen, China (5-8 September), Tokyo-based Mitsubishi Electric Corp has launched the ML760B54, a 25Gbps electroabsorption modulated laser (EML) CAN module (to be ...
Tags: Mitsubishi Electric
Mitsubishi Electric has developed an automotive camera technology that can detect several object types at distances of up to about 100m, allowing drivers to receive advanced warning for enhanced driving safety in coming mirrorless cars. ...
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Tokyo-based Mitsubishi Electric Corp has agreed to acquire the Mitsubishi Electric power device sales business currently handled by Powerex Inc of Youngwood, PA, USA (a 50:50 joint venture between Mitsubishi Electric and General Electric), ...
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HERE Technologies and Mitsubishi Electric have unveiled plans to link their technologies for autonomous vehicles into an integrated offering for automakers. Under the preliminary deal, the companies intend to provide services to support ...
Mitsubishi Electric will be showcasing its EMIRAI 4 concept car featuring next-generation driving-assistance technology, which can help reduce traffic accidents and contribute to a safe, convenient and environmentally friendly ...
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Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...
Tags: Power Device, Mitsubishi, SiC Mosfet
In booth 1827 at the IEEE MTT-S International Microwave Symposium (IMS2017) in Honolulu, Hawaii (6-8 June), Mitsubishi Electric US Inc of Cypress, CA is presenting a hands-on mini lab showcasing its high-efficiency, wide-band gallium ...
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Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
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Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
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Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...
The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
Tokyo-based Mitsubishi Electric Corp says that on 1 July it will start shipping a laser-diode transmitter optical subassembly (TOSA) capable of supporting 100Gbps optical transmissions. The new FU-402REA is being displayed at the Optical ...
Tags: Mitsubishi Electric, EML TOSA