Nitride LED articles & resources on Made-in-China.com

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Thin-Barrier Quantum Wells Increase Bandwidth of Cyan Light-Emitting Diode

Jun 21, 2016

Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...

Tags: InGaN, MQW, LED

CREE and Epistar Consolidate Market Position Through LED Patent Cross-License Agreement

Nov 12, 2015

Cree and Epistar announced on Aug. 4, 2015, the two companies signed a global LED patent cross license agreement. The move signals large LED manufacturers strategy of maintaining market positions through patent advantages, said LEDinside ...

Tags: CREE, LED lighting, LED patent

Cree and Epistar Sign Global LED Patent Cross-License Agreement

Aug 17, 2015

Cree and Epistar have signed a worldwide patent cross-license agreement for LED chips to further advance the growth of the LED lighting and LED bulb markets. Cree and Epistar both hold broad and substantial LED chip patent portfolios that ...

Tags: LED chip, LED lighting

Cree and Epistar Sign Global Nitride LED Chip Patent Cross-License Agreement

Aug 10, 2015

Cree Inc of Durham, NC, USA and Taiwan's Epistar Corp (the world's largest manufacturer of LED epiwafers and chips) have signed a worldwide patent cross-license agreement for LED chips to further advance the growth of the LED lighting and ...

Tags: LED chips, LED lighting

Researchers Have Used Wafer Thinning to Increase The Efficiency

Jan 3, 2014

Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...

Tags: Green LEDs GaN MOCVD, Electrical, Electronics

DenBaars Demonstrated up to 60 Percent Efficiency in Lab Demos

Nov 5, 2013

"These guidelines should permit the discovery of new and improved phosphors in a rational rather than trial-and-error manner," said Ram Seshadri, a professor in the university's Department of Materials as well as in its Department of ...

Tags: Optimizing Phosphors, Lighting

Breakthrough of Phosphor Research

Nov 4, 2013

By determining simple guidelines, researchers at UC Santa Barbara's Solid State Lighting & Energy Center (SSLEC) have made it possible to optimize phosphors –– a key component in white LED lighting –– allowing for ...

Tags: white LED lighting, efficient lights

University of California Santa Barbara Has Been Exploring The Use of Laser Diodes

Oct 22, 2013

University of California Santa Barbara has been exploring the use of laser diodes (LDs) in combination with phosphors as a means to produce white light [Kristin A. Denault et al, AIP Advances, vol3, p072107, 2013]. Commercial 'white' ...

Tags: Near-UV LD, Blue LD, LED, Electrical, Electronics

Azzurro Semiconductors AG Reported Uniformity Measurements for InGaN

Sep 27, 2013

Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...

Tags: InGaN Silicon substrates, LED, Electrical, Electronics

An Electric Field Develops in The P-Type Region of The Device

Aug 15, 2013

Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...

Tags: LED, Nitride LED, Electrical, Electronics

Researchers Have Used Laser Micromachining to Boost Light Extraction Efficiencies

Aug 7, 2013

Researchers in China have used laser micromachining to boost light extraction efficiencies of nitride semiconductor light-emitting diodes (LEDs) by up to 46% [Bo Sun et al, J. Appl. Phys., vol113, p243104, 2013]. The team was based at ...

Tags: LED, Laser Sculpting, Electrical, Electronics

Yole Should Concentrate on Sapphire and LED in Korea

May 29, 2013

Yole Développement organises a Seminar in Korea, concurrently held with International LED Expo 2013. Dedicated to Sapphire and LED areas, the seminar is made up of Yole Développement and industrial players presentations on the ...

Tags: Lights, Lighting, LED

Researchers Based in China and Sweden Have Proposed Fast CVD

May 17, 2013

Researchers based in China and Sweden have proposed fast chemical vapor deposition (CVD) of graphene as a route to more cost-effective transparent conducting layers (TCLs) for nitride semiconductor light-emitting diodes (LEDs) [Xu Kun et ...

Tags: Graphene GaN, LED Transparent Contacts

They Have Identified Auger Recombination as The Mechanism

Apr 26, 2013

Researchers at University of California, Santa Barbara, in collaboration with the école Polytechnique in Paris, France, say that they have identified Auger recombination as the mechanism that causes nitride light-emitting diodes ...

Tags: LED light, LED, light, Electronics

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