Nitride LEDs articles & resources on Made-in-China.com

University of Michigan Predicts Incorporating Boron in Ingan Increases LED Efficiency at High Power

Nov 24, 2017

Despite revolutionizing illumination, even top-of-the-line nitride LEDs are far from their maximum efficiency when operating at the high power needed for lighting applications. Logan Williams and Emmanouil Kioupakis at the University of ...

Tags: LEDs, LED Efficiency

Gallium Nitride Nano-Sized LEDs

Apr 11, 2016

In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...

Tags: LED, Nobel Prize

Plessey Expands GaN-on-Si LED Production Capacity With Aixtron AIX G5+C Cluster

Mar 9, 2016

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that UK-based Plessey Semiconductors Ltd has ordered an AIX G5+ C cluster system (for delivery in third-quarter 2016) to expand its production capacity for ...

Tags: Plessey GaN-on-Si HB-LEDs Aixtron MOCVD

NCTU Researchers Develop Bendable LEDs That Matches OLED

Nov 11, 2015

Researchers from National Chiao Tung University, Taiwan have created highly flexible, efficient white LEDs with potential use in wearable displays and non-flat surfaces, such as curved and flexible television screens. While the design ...

Tags: Bendable LEDs, flexible LEDs

Researchers Improves The Performance of with Ingan and LEDs

Nov 6, 2014

Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...

Tags: Nitride LEDs, InGaN

A Method Increase The Efficiency of Green-Blue-Ultraviolet LEDs

Feb 24, 2014

Scientists at the US Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet LEDs based on GaInN/GaN, AlGaN/GaN and AlInN/GaN quantum wells. It is reckoned that ...

Tags: Green-Blue-Ultraviolet LEDs

Researchers Developed a Selective Area Epitaxy Approach

Jan 6, 2014

Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...

Tags: Electrical, Electronics, LED

DenBaars Demonstrated up to 60 Percent Efficiency in Lab Demos

Nov 5, 2013

"These guidelines should permit the discovery of new and improved phosphors in a rational rather than trial-and-error manner," said Ram Seshadri, a professor in the university's Department of Materials as well as in its Department of ...

Tags: Optimizing Phosphors, Lighting

Breakthrough of Phosphor Research

Nov 4, 2013

By determining simple guidelines, researchers at UC Santa Barbara's Solid State Lighting & Energy Center (SSLEC) have made it possible to optimize phosphors –– a key component in white LED lighting –– allowing for ...

Tags: white LED lighting, efficient lights

LG Used AlGaN Superlattice Structures

Oct 29, 2013

LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...

Tags: Nitride LEDs, Light

Researchers in Taiwan Have Used Nanopyramid Nitride Semiconductor Structures

Oct 9, 2013

Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...

Tags: Nitride LEDs, Electronics

Cheng Kung University Has Developed Near-Green Light-Emitting Diodes

Oct 9, 2013

Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...

Tags: LEDs, Near-green LEDs, InGaN MOCVD

Azzurro Semiconductors AG Reported Uniformity Measurements for InGaN

Sep 27, 2013

Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...

Tags: InGaN Silicon substrates, LED, Electrical, Electronics

Jimei University Used InGaN P-Type Contacts to Increase Light Output Power by 45%

Sep 16, 2013

Jimei University in China has used indium gallium nitride (InGaN) p-type contacts to increase light output power by 45% over a reference device [Wang Min-Shuai and Huang Xiao-Jing, Chin. Phys. B, vol. 22, p086803, 2013]. The researchers ...

Tags: InGaN LEDs MOCVD, LED, Electrical, Electronics

Researchers in South Korea and USA Have Been Developing Graded

Aug 23, 2013

Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...

Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor

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