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BAE Systems and Purdue University Developed Atomic Layer Deposited (ALD) Aluminium Oxide
May 13, 2013Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
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