In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...
Tags: GaN Epiwafer, epitaxial wafer
PowerSphyr Inc of Danville, CA, USA – which delivers end-to-end wireless power charging solutions – and GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for ...
Alta Devices of Sunnyvale, CA, USA (a subsidiary of Hanergy Thin Film Power Group Ltd of Beijing, China since 2014) says that its solar cells have powered a CubeSat mission by Twiggs Space Lab LLC (TSL), NearSpace Launch Inc (NSL) and their ...
Tags: solar cell, Alta Device
Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...
Tags: Panasonic, Power Transistor
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has announced its corporate name change to pSemi Corp, a Murata company ...
Tags: Semiconductor, integrated circuit
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...
Tags: GaN Systems, integrated circuits
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – and Taiwan’s Ministry of Economic Affairs (MOEA) have ...
Tags: GaN Systems, Power Challenges
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...
Tags: EPC, Wireless Power Demonstration
As part of the Special Session program at the IEEE Energy Conversion Congress & Expo (ECCE 2017) in Cincinnati, OH (1–5 October), the Power Electronics Industry Collaborative (PEIC) – a national, industry-focused member-based ...
Tags: semiconductor, supply chain
Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland has reported repeat sales of automated P-300BV vacuum batch production systems to major Asian discrete device manufacturers. Even if the 300mm wafer size ...
Tags: LED lighting, MEMS
The Power Electronics Industry Collaborative (PEIC) – a national, industry-focused member-based consortium consisting of original equipment manufacturers (OEMs), material suppliers, researchers and government stakeholders in the US ...
Tags: Power electronics, GaN, SiC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...