RF Amplifier articles & resources on Made-in-China.com

Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT

Sep 23, 2016

In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...

Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016

Pasternack Launches Rack-Mount Variable-Gain RF Amplifier Operating From 100MHz to 18GHz

Feb 3, 2016

Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a 19-inch rack-mounted variable-gain RF amplifier operating from 100MHz to 18GHz, designed for lab ...

Tags: Pasternack, RF Amplifier

Pasternack Introduces Broadband Portable Bench-Top Rf Amplifiers

Apr 7, 2015

Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched new lines of portable bench-top amplifiers that cover extremely wide frequency bands up to 40GHz. ...

Tags: Pasternack, AC voltage, Electrical

M/A-COM Launched a Portfolio of High-Performance Cable TV Amplifiers

Mar 13, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for, RF, microwave, millimeter-wave and photonic applications) has launched a portfolio of high-performance cable TV (CATV) ...

Tags: M/A-COM, CATV amplifier

RF Launched Ten New 1 Watt and 2 Watt Broadband Amplifiers Suitable for Defense

Apr 16, 2014

RF, microwave and millimeter-wave product maker Pasternack Enterprises Inc of Irvine, CA, USA has launched ten new 1 Watt and 2 Watt broadband amplifiers suitable for defense, EW/ECM (electronic warfare/electronic counter-measures), radar, ...

Tags: power amplifier

Hittite Microwave Launched a GaAs MMIC I/Q Upconverter

Jan 3, 2014

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a gallium arsenide (GaAs) ...

Tags: Hittite, Electrical, Electronics

TriQuint Semiconductor Announced The Release of New Gallium Nitride Transistors

Oct 9, 2013

TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...

Tags: TriQuint, Optical Modulator

Aethercomm Is Launching The SSPA 6.000-18.000-50 High-Power Super-Broadband GaN RF

Sep 17, 2013

Aethercomm Inc of San Marcos, CA, USA, which designs and makes high power RF amplifiers, subsystems and systems for use in radar, electronic warfare, communication systems, and test & measurement, is launching the SSPA 6.000-18.000-50 ...

Tags: power amplifiers, Electrical, Electronics

TriQuint Semiconductor Acquired CAP Wireless of Newbury Park

Aug 9, 2013

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has acquired CAP Wireless of Newbury Park, CA and its patented Spatium RF power combining technology, which replaces travelling-wave ...

Tags: Electrical, Electronics

Anadigics Introduced a New RF PA Optimized to Power 3G and 4G Small-Cell Base-Stations

Jun 4, 2013

GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...

Tags: Anadigics, Electrical, Electronics

Held Every Year in February,The IEEE's ISSCC Is The World Showcase for Innovative Design

Feb 25, 2013

Held every year in February in San Francisco, the IEEE's International Solid State Circuits Conference (ISSCC) is the world showcase for innovative circuit design. This is the 60th conference, and year's theme is '60 years of (em)powering ...

Tags: IEEE, ISSCC, circuit design

It Has Announced That Ni Adds IP Offers to Allow Engineers to Build Custom RF Instruments

Jan 24, 2013

National Instruments has announced 10 blocks of application IP as part of its offering to allow engineers to build custom RF instruments in LabVIEW. This IP integrates with PXI FPGA targets such as the PXIe-5644R vector signal transceiver ...

Tags: application IP, custom RF instruments, LabVIEW

RFMD Has Been Awarded a$2.1m Contract From The US DARPA

Oct 25, 2012

RF Micro Devices Inc of Greensboro,NC,USA has been awarded a$2.1m contract from the US Defense Advanced Research Projects Agency(DARPA)to enhance the thermal efficiency of gallium nitride(GaN)circuits used in high-power radar and other ...

Tags: RFMD, GaN technology, DAPPA, NJTT, military system

as System Complexity Increases No Longer Is Simple Stimulus and Response Testing Enough

Jun 21, 2012

As system complexity increases no longer is simple stimulus and response testing enough,test systems need to simulate the world around a device and testing it under realistic operating conditions and for this FPGA-based instruments come ...

Tags: microprocessor, FPGA, CPU

Cree Launched a 40V,0.25UM,GaN-on-SiC Hemt Process Die Product Family

Jun 18, 2012

Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...

Tags: Cree, GaN-on-SiC, HEMT, Amplifier

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