MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has expanded its growing portfolio of monolithic microwave ...
Tags: MACOM, power amplifiers, MMICs
Gilat Satellite Networks Ltd of Petah Tikva, Israel (which provides products and services for satellite-based broadband communications) has signed a development agreement with a major aerospace systems integrator to further develop both its ...
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of gallium nitride (GaN) power amplifiers (PAs) that are said to dramatically improve the ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a high-linearity 6W power amplifier, suited to ...
Tags: Power Amplifier, Electronics
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that its Spatium technology achieves unprecedented levels of Ka-band solid-state power, bandwidth and efficiency, providing greater broadband capacity and ...
Tags: Electrical, Electronics
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc(TAEC)-a subsidiary of Tokyo-based semiconductor maker Toshiba Corp-has announced a Ka-band high-power gallium nitride(GaN)microwave monolithic integrated circuit(MMIC)with what it claims is one of ...
Specialty foundry TowerJazz(which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek,Israel,and at its subsidiaries Jazz Semiconductor Inc in Newport Beach,CA,USA and TowerJazz Japan Ltd)and Phasor Solutions Ltd of ...
Tags: TowerJazz, SiGe, BiCMOS, Satellite Communications
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE