Schottky Barrier

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Two-Dimensional Gallium Nitride with Graphene Encapsulation

Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...

Tags: 2D GaN, graphene encapsulation, SiC

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Non-Alloyed Contacts For Gallium Arsenide Devices

Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...

Tags: GaAs, HEMTs, CMOS

Tantalum Barrier Reduces Gallium Phosphide Contact Resistance

Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...

Tags: AlGalnP, Tantalum barrier, LED

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

Pasternack Adds Waveguide Frequency Mixers Operating Across Full Ka, Q, U, V, E & W Ww-Wave Bands

Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has added new millimeter-wave (mm-wave) waveguide frequency mixers available in six down-conversion and six ...

Tags: Pasternack, waveguide mixers, GaAs

Toyoda Gosei Developed Vertical GaN SBDs Capable

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...

Tags: Vertical Schottky barrier, power supply, diodes Free standing