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SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019
Sep 27, 2017“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
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Pallidus Launches M-SiC Silicon Carbide Source Material and Technology Platform
Aug 18, 2017Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...
Tags: Silicon Carbide, Pallidus
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Disco Develops Laser Ingot Slicing Method to Speed Sic Wafer Production and Cut Material Loss
Aug 12, 2016Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
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Infineon to Acquire Wolfspeed for $850m
Jul 16, 2016Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
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X-FAB Offers High-Volume 6-Inch SiC Foundry Production
Mar 15, 2016X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
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SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics
Oct 19, 2015When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
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Lasertec Launches System for Concurrent Surface and Pl Crystallographic Defect Inspection of SiC Wafers
Sep 29, 2015Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...
Tags: Lasertec, SiC Wafers
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II-VI Inc Dvances Materials Division of Its Performance Products Segment in Pine Brook
Jul 21, 2015II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
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Sic-Based ICS Operable at Over 350ºC
Jun 16, 2014Researchers at the University of Arkansas have designed integrated circuits that can survive at temperatures greater than 350°C (about 660°F). Funded by the US National Science Foundation (NSF), their work could improve the ...
Tags: SiC Power electronics HEV, Electrical, Electronics, circuits
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Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality
May 13, 2014Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
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IQE Is to Play a Key Part in a US Public-Private Consortium
Jan 21, 2014Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is to play a key part in a US public-private consortium of more than 25 companies, universities and state and federal organizations selected to lead the Next Generation ...
Tags: IQE, Power electronics, GaN-on-Si, CMOS
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Dow Corning Appointed TY as Vice President
Oct 25, 2013Dow Corning Corp of Midland, MI, USA, which provides silicones and silicon-based technology, has appointed Tang Yong Ang ('TY') as vice president of Dow Corning's Compound Semiconductor Solutions business, a provider of silicon carbide ...
Tags: Electrical, Electronics
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LEDs Are Projected to Grow More Than Six-Fold to Nearly $100 Billion
Mar 13, 2013LEDs are projected to grow more than six-fold to nearly $100 billion and power conversion electronics to $15 billion over the next decade as the desire for energy efficiency drives adoption, says Lux Research. While the market opportunity ...
Tags: Electrical, Electronics, Lights, LED
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LEDs Are Projected to Grow More Than Six-Fold to Nearly $100bn
Feb 27, 2013LEDs are projected to grow more than six-fold to nearly $100bn and power conversion electronics to $15bn over the next ten years, reckons market analyst firm Lux Research in the report “Winning the Jump Ball: Sorting Winners from ...
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cree Will Help to Lower Device Cost and Enable Adoption for Customers
Aug 31, 2012Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
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