A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has signed a distribution agreement with AnnealSys SAS of Montpellier, France, which specializes in ...
Tags: Riber, MBE systems
17 September 2012 Arsenide nanowires on graphite and graphene Researchers at Norwegian University of Science and Technology(NTNU)have succeeded in growing gallium arsenide(GaAs)and indium arsenide(InAs)compound semiconductor crystal ...
Tags: GaAs Nanowires, Solar Cells LEDs, Graphitic Substrates, Graphene