Cree Inc of Durham, NC, USA (which makes lighting-class LEDs, LED lighting and power semiconductors) has announced the pricing of $500m of its 0.875% convertible senior notes due 2023 in a private offering to qualified institutional buyers. ...
Tags: LED lighting, LEDs
The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
Cree, Inc. on Tuesday reported financial results for its third quarter of fiscal 2017, ended March 26, 2017, which missed Wall Street expectations. Shares of Cree declined over 7% in after-hours trade. Revenue for the quarter was ...
Tags: Cree, LED Products
AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...
Tags: SiC MOSFET, AgileSwitch LLC
Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has introduced what it claims is the first 1000V MOSFET, which ...
Tags: Wolfspeed, 1000V SiC MOSFET
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...
Tags: GaN, Micro Devices, Semiconductor
For full-year fiscal 2016 (ended 26 June), Cree Inc of Durham, NC, USA has reported revenue of $1.62bn, down slightly on $1.63bn for fiscal 2015, as growth in commercial lighting and stable LED revenue was offset by lower consumer lighting ...
Tags: Cree Inc, revenue report, LED products
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...