Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
The UK Chancellor has warned of an increased risk of cyber attacks while laying out plans for a previously announced £1.9bn cybersecurity strategy. Philip Hammond said the country must be able to retaliate against cyber-attacks, ...
Tags: Chancellor, Cyber Attacks
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Northrop Grumman Corp of Redondo Beach, CA, USA has received a contract from the US Marine Corps (USMC) for an additional nine AN/TPS-80 Ground/Air Task-Oriented Radar (G/ATOR) low-rate initial production (LRIP) systems. This is the ...
Tags: Northrop Grumman.GaN-on-SiC, USMC
UK-based Cobham has launched a scalable family of gallium nitride (GaN) solid-state transmitter solutions. SOLSTx (pronounced 'solstice') is optimized for ground, maritime and airborne applications including air-traffic control, weather, ...
Tags: Radar Transmitters, Cobham
UK-based Cobham plc (which designs and manufactures equipment, specialized systems and components for the aerospace, defense, energy and electronics industries) has established a strategic partnership to incorporate the gallium nitride ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) says that, following the field trial of the Multifunction ...
Tags: M/A-COM, SPAR Tiles, MPAR radar system
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
M/A-COM Technology Solutions Inc (MACOM) of Lowell, MA, USA (which makes semiconductors, components and subassemblies for, RF, microwave, millimeter-wave and photonic applications) has released a high-power pulsed amplifier designed for ...
Tags: RF, microwave, millimeter-wave, Electrical
Pasternack Enterprises Inc of Irvine, CA, USA (which makes passive and active RF, microwave and millimeter-wave products) says that it has significantly expanded its portfolio of connectorized RF amplifiers including high-power amplifiers, ...
Tags: RF amplifiers, Pasternack
Spending on RF power semiconductors for the wireless infrastructure markets leapt up again in 2013 to more than $1bn, according to the latest study ‘RF Power Semiconductors’ from ABI Research’s High-Power Active Devices ...
Raytheon Company of Waltham, MA, USA has been awarded a $6m study and demonstration contract by the US Office of Naval Research (ONR) to further develop an enterprise air surveillance radar (EASR) powered by gallium nitride (GaN) ...
As the plane carrying your correspondent from Hong Kong to Singapore started its descent to the Changi airport, the world's fifth busiest, it started flying circles. Shortly afterwards, the captain explained that multiple aircrafts were on ...
Tags: Consumer Electronics, Electronics