Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Light can trigger coordinated, wavelike motions of atoms in atom-thin layers of crystal, scientists have shown. The waves, called phonon polaritons, are far shorter than light waves and can be "tuned" to particular frequencies and ...
Tags: Consumer Electronics, Electronics
The Atomic Force Microscope (AFM), which uses a fine-tipped probe to scan surfaces at the atomic scale, will soon be augmented with a chemical sensor. This involves the use of a hollow AFM cantilever, through which a liquid - in this case ...
Tags: Chemical Sensor, Consumer Electronics, Electronics, Sensor
Anasys Instruments is proud to announce the nanoIR2, a second generation AFM based IR spectroscopy (AFM-IR) platform. A key breakthrough is the ability of the nanoIR2 to operate with top-side illumination, eliminating the prior need to ...
Tags: Anasys Instruments, NanoIR2
Recent progress in the engineering of plasmonic structures has enabled new kinds of nanometer-scale optoelectronic devices as well as high-resolution optical sensing. But until now, there has been a lack of tools for measuring ...
Tags: Electrical, Electronics
In a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers – supported by the US National Science Foundation (NSF) - have demonstrated a ...
Tags: GaN nanowires, semiconductor processing techniques, semiconductor
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
Strategies United predicts that by 2015 the global market for high brightness LEDs (HB-LEDs) will generate revenues of $18.9 billion, representing a compound growth rate of 11.8%. A key factor in the growth of HB-LEDs is the use of ...
Tags: LED
Bruker Nano Surfaces Division(Santa Barbara,CA)has shipped a Dimension Icon®Atomic Force Microscope(AFM)to the European Technical Centre(Lathom,UK)of the global glass manufacturer NSG Group.The Dimension Icon system is equipped with ...
Tags: NSG Group, Bruker dimension Icon, atomic force microscope
Toshiba Corporation has developed an anti-wear nano-lithographic probe in collaboration with Tokyo University and BEANS laboratory.The probe is designed for making and repairing masks for next generation semiconductor production at 16-to ...
Examination of tissues drawn from Otzi gives an insight into blood cell degradation over fifty centuries. Opening old wounds Since his discovery in the Ötztal Alps in 1991, the ...