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Each Device Is an Input-Matched GaN Transistor Packaged in an Air-Cavity Ceramic Package
Dec 6, 2012RF Micro Devices Inc of Greensboro, NC, USA says that its new RFHA104x series of high-power gallium nitride (GaN) broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and ...
Tags: RF Micro Devices, broadband power transistors, wireless infrastructure
