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Osram Boosts Efficiency of Green LEDs by 40%
May 18, 2018Osram Opto Semiconductors GmbH of Regensburg, Germany has succeeded in reducing the typical forward voltage by about 600mV to 2.6V (at a power density of 45A/cm2) in its indium gallium nitride (InGaN)-based green direct-emitting LEDs. With ...
Tags: Osram, Green LEDs
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SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line
Nov 28, 2017SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...
Tags: SPTS, GaN-on-SiC, LED
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Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides
Sep 23, 2016Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
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Gallium Arsenide Phosphide Solar Cells on Silicon with Record 12% Efficiency
Aug 26, 2016Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
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Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals
Aug 19, 2016A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
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Correcting Charge Polarization Calculations for III-Nitrides
Jul 7, 2016Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
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Kyma and Quora Partner on GaN Substrate Materials
Jun 23, 2016Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates
Apr 6, 2016The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
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Seoul Semiconductor Invalidates Enplas Lens Patents and Acquires Royalty-Bearing Licenses
Dec 11, 2015Seoul Semiconductor announced that it has prevailed in a series of patent invalidation actions against Japanese lens maker Enplas also concluded royalty-bearing licenses regarding LED technology with North American television makers, which ...
Tags: Semiconductor, backlighting units, LED chips
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Seoul Wins Patent Case and Agrees Royalty-Bearing Licenses
Dec 10, 2015South Korean LED maker Seoul Semiconductor Co Ltd says that it has prevailed in a series of patent invalidation actions against Japanese lens maker Enplas Corp and has also concluded royalty-bearing licenses regarding LED technology with ...
Tags: LED packaging, LED chips
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Seoul Semiconductor Wins Patent Infringement Lawsuit Against Craig Electronics
Nov 13, 2015One year ago, Seoul Semiconductor filed a patent infringement lawsuit in U.S. Federal District Court asserting that Craig’s sales of LED backlighting unit products infringed five of Seoul’s patents. On July 23, 2015, the court ...
Tags: Seoul Semiconductor, LED chips, LED products
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Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-Transistor Blocking Voltage
Nov 11, 2015Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
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Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes
Oct 15, 2015Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
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265nm-Wavelength LEDs Is More Powerful and Efficient
Apr 22, 2015Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices