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frequency performance
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Qorvo Launches Dual-Transistor GaN-on-Sic Asymmetric Doherty Amplifier Module for Macro Base-Stations
Aug 14, 2017Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...
Tags: Qorvo, GaN, RF, GaN-on-SiC
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GaN to Drive Its Share of RF High-Power Semiconductor Revenue to More Than Double by 2022
Jun 21, 2017Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
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Peregrine Unveils First 60GHz RF SOI Switches
Oct 12, 2016Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42525 and PE426525, which are claimed to ...
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RF High-Power Semiconductor Market for Wireless Infrastructure Flattening out in 2016 Despite Overall Market Exceeding $1.5bn in 2015
Jul 26, 2016Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
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High-Performance Gallium Nitride on Low-Resistance Silicon
Aug 31, 2015University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
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M/a-COM Launched a 650W Gan on Silicon Carbide Hemt Pulsed Power Transistor
Mar 24, 2015M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...
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High-Frequency Performance of Gallium Nitride Gan Has Been Reported in Singapore
Sep 5, 2014Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
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Higher Breakdown Voltage for FP GaN HEMTs Over Convention Field-Plate Designs
Sep 3, 2014Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
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Spending on RF Power Semiconductors Leapt up Again in 2013 to More Than $1bn
Jun 6, 2014Spending on RF power semiconductors for the wireless infrastructure markets leapt up again in 2013 to more than $1bn, according to the latest study ‘RF Power Semiconductors’ from ABI Research’s High-Power Active Devices ...
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Singapore's Nanyang Developed Conventional AlGaN High-Electron-Mobility Transistors
Apr 8, 2014Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
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AFRL/RX Has Completed a Program to Assess and Validate a Domestic Source
Jan 4, 2014A government and industry team led by engineers from the US Air Force Research Laboratory’s Materials and Manufacturing Directorate (AFRL/RX) has completed a program to assess, improve, refine and validate a domestic source of supply ...
Tags: Electrical, Electronics
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Researchers in Taiwan Have Used a Palladium Oxide Gate Interlayer
Oct 30, 2013Researchers in Taiwan have used a palladium oxide (PdO) gate interlayer to improve nitride semiconductor high-electron-mobility transistor (HEMT) performance [Ray-Ming Lin et al, Jpn. J. Appl. Phys., vol52, p111002, 2013]. In particular, ...
Tags: HEMT MOCVD GaN, Electrical, Electronics
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NTU Has Developed a Passivation Process for Aluminium Gallium Nitride
Oct 12, 2013Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
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The UK's University of Manchester Has Used Band Engineering on InP
Jul 8, 2013The UK's University of Manchester has used band engineering on indium phosphide (InP) to create indium gallium arsenide (InGaAs) pseudomorphic high-electron-mobility transistors (pHEMTs) with reduced gate current leakage and high breakdown ...
Tags: Barriers
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Diamond Is of Interest for High-Power, High-Frequency Electronics
Jul 3, 2013China-based researchers have reported that country's first diamond metal-semiconductor field-effect transistors (MESFETs) with RF characteristics [Feng ZhiHong et al, Science China Technological Sciences, vol56, p957, 2013]. The team was ...
Tags: Diamond MESFET MESFET Diamond, Electrical, Electronics
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