growing indium arsenide

Researchers Based in France and Germany Have Developed Techniques for Growing InAs
Dec 6, 2012
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...

Tags: growing indium arsenide, InAs, chemicals