The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
Dialog Semiconductor, a provider of highly integrated power management, audio, AC/DC and short-range wireless technologies, today announced a new SSL LED driver iW3623. The new iW3623 integrates boost and flyback converters into a single IC ...
New driver IC architecture seeks to reduce bill of materials cost in 8–15W retrofit lamps while still supporting smooth dimming over a 1–100% range. iWatt has introduced the iW3202/08 LED driver ICs that primarily target ...
Tags: LED Driver, Lighting
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, ...
Tags: GeneSiC, junction transistors, power system
A non-dimmable, single-stage architecture seeks to minimize the bill of materials for LED A-lamps, thereby opening the market to greater SSL adoption. Power IC specialist iWatt has introduced a single-stage LED driver IC that is ...
Tags: LED A-lamps, SSL adoption, lighting
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device