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n MOSFETs
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Raytheon Has Opened a Silicon Carbide Fab in Glenrothes Scotland
Feb 1, 2013Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC
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InGaAs Devices Have Been Grown on Indium Phosphide (InP) Substrates
Dec 6, 2012Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
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