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power conversion system
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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VisIc Launches 650V Half-Bridge Evaluation Board
Apr 15, 2016VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...
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EPC Posts Video Series on How to Design with GaN Power Devices for Power Conversion
Feb 12, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
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The 60V EPC2102 and The 80V EPC2103 Enhancement-Mode Monolithic Gan Transistor Half-Bridge
Jan 23, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the 60V EPC2102 and the 80V ...
Tags: power conversion system, chip-scale package, Electrical
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EPC2100 Family of EGaN Power Transistor Products Honored by Electronic Products Magazine
Jan 8, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that its EPC2100 family of eGaN ...
Tags: Electronic Products, Electrical
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Over 82% at 30A When Switching at 500kHz and Converting From 28V to 1V
Nov 19, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2101, a 60V ...
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EPC Launched EPC2100, First Commercially Available Monolithic Egan Transistor Half-Bridge
Sep 25, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2100, the first ...
Tags: EPC, EPC2100, Electrical
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SPICE Models Have Been Included in The Latest Version
Dec 19, 2013Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its enhancement-mode gallium nitride-on-silicon transistor (eGaN FET) SPICE models have been included in the latest version of National Instruments' Multisim circuit ...
Tags: Electrical, Electronics, Circuit
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Microsemi Has Launched a New Generation of Industrial-Temperature MIC
Jan 16, 2013Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has launched a new generation of industrial-temperature silicon carbide (SiC) standard power modules, ...
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CREE Inc of Durham, NC Is Announcing The Commercially Availability
Dec 6, 2012In hall A5, booth 343 at electronica 2012 in Munich, Germany (13–16 November), Cree Inc of Durham, NC, USA is announcing the commercially availability of what it claims is the industry’s first fully qualified, production-ready ...
Tags: power module, silicon carbide, high-frequency module, power converters
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Dongguan Tianyu Has Started to Expand Its Sic Epiwafer Business
Sep 3, 2012Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
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