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ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

Picosun Collaborating with Taiwan's NCTU and Atom Semicon on ALD

Jul 7, 2017

Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...

Tags: GaN devices, Electro-Optical Engineering

TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics

Jun 29, 2017

Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...

Tags: GaN Inverter, AC Servo Drives

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

TMD Exhibiting GaN-Based Microwave Power Module at UAE Electronic Warfare Conference

Sep 27, 2016

Exhibiting for the first time at an electronic warfare (EW) exhibition in the United Arab Emirates (UAE), on stand 26 at the Electronic Warfare GCC Conference (EW GCC 2016) in Abu Dhabi (25-26 October) UK-based TMD Technologies Ltd (TMD) - ...

Tags: TMD, EW exhibition, EW GCC 2016

Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets

Sep 20, 2016

Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...

Tags: Telcodium, Transphorm, GaN FETs

Mitsubishi Electric Launches Super-Mini Full-Sic Dipipm for Air Conditioners

Aug 19, 2016

Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...

Tags: DIPIPM, Mitsubishi Electric Corp, SiC-MOSFETs

Raytheon UK Develops Sic-Based High-Temperature Small-Form-Factor Power Module for Electrical Switching in Harsh Environments

Jul 16, 2016

Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...

Tags: Raytheon, Electrical Switching

Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination

May 11, 2016

In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...

Tags: Power Module, Gate Driver

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

Vishay Launches Metal-Core-Based Cool-White LED Power Module

Feb 3, 2016

Vishay Intertechnology Inc of Malvern, PA, USA has launched a new metal-core-based cool-white LED power module featuring 12 high-brightness LEDs with high luminous flux of 4000lm each at 1A. To simplify designs and manufacturing ...

Tags: Vishay, LED Power Module

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Dec 2, 2015

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

LG to Supply Key Components for GM's Chevrolet Bolt EV

Oct 23, 2015

American car manufacturer General Motors (GM) has selected LG Electronics as its partner in developing the next generation Chevrolet Bolt electric vehicle (EV) at its Orion township, Michigan, US. As per the partnership, LG will provide ...

Tags: Chevrolet Bolt EV, LG

Cree's Quarterly LED Product Revenue Falls 21% Amidst Restructuring

Aug 17, 2015

For full-year fiscal 2015 (ended 28 June), Cree Inc of Durham, NC, USA has reported revenue of $1.63bn, down just 1% on fiscal 2014's record $1.65bn. Specifically, revenue for Lighting Products (mainly LED lighting systems and bulbs) grew ...

Tags: LED Product, LED chips

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