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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

ARPA-E Awards $30m for 21 Projects as Part of Circuits Program

Aug 28, 2017

The US Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) has announced $30m in funding for 21 projects as part of the CIRCUITS program (‘Creating Innovative and Reliable Circuits Using Inventive Topologies ...

Tags: WBG devices, electronics devices

NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch

Oct 12, 2016

Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...

Tags: NCSU, Low-Cost SiC High-Voltage Switch

VisIC Launches 1200V Family of GaN Power Switching Devices with Integral Iso-Driver

Sep 20, 2016

At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...

Tags: ECCE2016, VisIC Technologies, MISHEMTs

Consumer Electronics Chargers to Comprise 30% of GaN Market in 2022

Sep 9, 2016

The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...

Tags: GaN power devices, Dialog Semiconductor plc

Peregrine Unveils Fastest GaN FET Driver

Jul 16, 2016

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...

Tags: Peregrine, GaN FET Driver

Toyoda Gosei Develops High-Voltage GaN Power Semiconductor Device for Large-Current Operation

Jul 12, 2016

Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...

Tags: Toyoda Gosei, wiring technology, hybrid vehicles

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

UK's EPSRC Centre for Power Electronics and GaN Systems Launch Future Power Challenge

Feb 14, 2016

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...

Tags: GaN Systems, power electronics

Japanese Manufacturer Showa Denko Qualify Its Most Recent System for Manufacturing Sic

Oct 31, 2014

Deposition equipment maker Aixtron SE of Aachen, Germany says that Japanese manufacturer Showa Denko has qualified its most recent system for manufacturing silicon carbide (SiC) epitaxial wafers. The new AIX G5 WW (Warm-Wall) chemical vapor ...

Tags: SiC Production, Deposition equipment

Cree to Participate in The 11th Annual Darnell Power Forum in Richmond

Sep 22, 2014

Cree is to participate in the 11th annual Darnell Power Forum (DPF 2014) in Richmond, VI (23-25 September). As part of Darnell’s Energy Summit 2014 (a solutions-oriented conference and exhibition event that also hosts the Green ...

Tags: Cree, Darnell Power Forum, Electronics

Germany Has Teamed up with Fraunhofer Iisb to Develop 150mm SiC

Sep 10, 2014

Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...

Tags: Aixtron CVD SiC, Electrical, Electronics

Cree's 1200v Sic Mosfets Have Been Selected by Japan for Solar Inverters in Construction

Sep 9, 2014

Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...

Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics

AVX Has a Range of Medium Power DC-Link Film Capacitors

Aug 15, 2014

AVX has a range of medium power DC-link film capacitors, which have self-healing properties. FRC series capacitors are comprised of dry, wound, metalized polypropylene film dielectricThe insulating material between the plates of the ...

Tags: AVX, Capacitor, Electrical, Electronics

Avnet Has Announced It Now Stocks The Avx PA Flb Series Medium Power Film Capacitor

Aug 15, 2014

Avnet has announced it now stocks the AVX PA FLB Series medium power film capacitor. The capacitor uses a metallized polypropylene dielectricThe insulating material between the plates of the capacitor. The material is chosen for its ability ...

Tags: Avx, Electrical, Electronics

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