The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Market insiders noted that TSMC (Taiwan Semiconductor Manufacturing Co.), the world's largest semiconductor foundry headquartered in Taiwan, will see a strong revenue performance as the firm won massive orders from multinational ...
Tags: TSMC, semiconductor
“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...
Tags: Power Device, Mitsubishi, SiC Mosfet
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA (which makes high-power semiconductor laser components) has announced the commercial availability of its actively cooled laser bars, emitting 200W of ...
As part of the Special Session program at the IEEE Energy Conversion Congress & Expo (ECCE 2017) in Cincinnati, OH (1–5 October), the Power Electronics Industry Collaborative (PEIC) – a national, industry-focused member-based ...
Tags: semiconductor, supply chain
Tokyo-based Showa Denko K.K. (SDK) has expanded its product lineup of infrared light-emitting diode (IR-LED) chips, which are mainly used as parts of photo-couplers for gate drivers in power semiconductor modules and parts of sensors for ...
Yole Développement’s ‘RF Power Market and Technologies 2017: GaN, GaAs and LDMOS Report’ forecasts that, after shrinking in 2015 and 2016 as telecom operators invested less, the total RF power semiconductor market ...
Tags: Semiconductor, 4G networks
Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
At the InnoTrans trade show in Berlin, Germany (20-23 September), ABB of Zurich, Switzerland is launching a next-generation battery charger based on silicon carbide (SiC) power semiconductors for use in all rail applications. Train ...
Tags: ABB, InnoTrans trade show in Berlin, Sic-based battery charger
TDK Corporation and Toshiba Corporation have agreed to establish a joint venture, TDK Automotive Technologies Corporation, to develop and manufacture automotive inverters for hybrid vehicles, plug-in hybrids and electric vehicles. I. ...
Tags: TDK, Toshiba, joint venture
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination