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Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion

Oct 20, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...

Tags: gallium nitride, integrated circuits

GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers

Oct 20, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...

Tags: GaN Systems, integrated circuits

MACOM Demos RF Energy Toolkit to Speed Time-to-Market of GaN-on-Si-Based RF Systems for Commercial Applications

Jun 21, 2017

MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has unveiled a development kit targeted at helping ...

Tags: RF Systems, power transistors

Wide-Bandgap Power Semiconductor Device Market to Grow at 33% Annually to $3.7bn in 2025

Aug 1, 2016

Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...

Tags: Semiconductor, GaN power devices

Raytheon UK Develops Sic-Based High-Temperature Small-Form-Factor Power Module for Electrical Switching in Harsh Environments

Jul 16, 2016

Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...

Tags: Raytheon, Electrical Switching

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Jun 21, 2016

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

Panasonic Showcases GaN-Based Technologies at PCIM Europe

May 23, 2016

At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...

Tags: GaN power devices, SiC

RJR Ships 10 Millionth Air-Cavity Plastic Package, Highlighting Migration From Air-Cavity Ceramic Packaging for RF

May 20, 2016

RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...

Tags: microwave packaging, Plastic Package

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments

Apr 15, 2016

Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...

Tags: Wolfspeed, Harsh Space Environments

Wolfspeed Ships GaN RF Devices Surpassing 1.3GW Output While Maintaining FIT Rate Of 5-Per-Billion Device

Mar 16, 2016

Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...

Tags: Wolfspeed, Research Triangle Park

GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025

Mar 13, 2016

Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...

Tags: Semiconductor Market, GaN, SiC

GaN Systems' Transistors Used In Winning Inverter Design For $1m Google Little Box Challenge

Mar 9, 2016

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that its GS66508P gallium nitride power transistors were ...

Tags: GaN Systems, E-mode GaN FETs, Power electronics inverters

MACOM Debuting New GaN Power Transistors for Macro Base-Stations Among Expanded Wireless Infrastructure at Mobile World Congress

Feb 22, 2016

At the Mobile World Congress (MWC 2016) in Barcelona, Spain (22–25 February), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...

Tags: M/A-COM, Transistors

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