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Navitas Launches First GaN Power ICs

Mar 21, 2016

Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...

Tags: GaN, Power electronics

GE Aviation Receives $2.1m US Army Contract To Develop SiC Power Electronics

Mar 21, 2016

GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...

Tags: GE Aviation, SiC power devices

EPC Publishes Reliability Report Documenting Over 17bn Field-Device Hours With Very Low Failure Rate

Mar 16, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Seven Reliability ...

Tags: EPC, E-mode GaN FETs, GaN-on-Si

Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits

Aug 10, 2015

Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...

Tags: GaN Transistors, Power Electronic Circuits

Power Electronics Will Continue Their Domination of The Markets with an 87% Market Share

Jun 4, 2015

Driven by technology innovations, silicon-based power electronics will continue their domination of the fastest-growing and largest markets, allowing silicon to maintain an 87% market share, worth $20bn by 2024, and constraining ...

Tags: GaN SiC Power electronics, Electrical, Electronics

ON Semiconductor Showcases GaN HEMT-based Two-stage Converter at PCIM

Apr 24, 2015

At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...

Tags: silicon-based power, two-stage converter

Transphorm Announced The Introduction of Two Co-Branded 600v GaN Cascode Transistors

Mar 17, 2015

At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...

Tags: APEC 2015, GaN Power Devices

The Next-Generation Power Semiconductor Market to Increase

Oct 16, 2014

The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...

Tags: Power Semiconductor, Electronics

Era Will Begin to Come to an End

Mar 5, 2014

In the last century, silicon-based power electronics (which control or convert electrical energy into usable power) transformed the computing, communication, electric vehicle and energy industries and gave consumers and businesses more ...

Tags: Electric Vehicle, Semiconductors

Japan Has Released The MB51T008A

Jul 15, 2013

Fujitsu Semiconductor Ltd of Yokohama, Japan has released the MB51T008A, a silicon-substrate-based, gallium-nitride (GaN) power device with a drain-source breakdown voltage (V(BR)DSS) of 150V. Features of the MB51T008A include: (1) ...

Tags: Power Device, Electrical

OPEL Has Achieved Milestone 6 in The Development Roadmap of Its Proprietary POET Platform

Jul 3, 2013

OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA – says it has achieved Milestone 6 ...

Tags: Electrical, Electronics

The Power Electronics Downturn in 2012 Was Quite Severe

May 29, 2013

Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...

Tags: Yole SiC, inverters

Funds Have Sold Their Stakes in Javelin Semiconductor Inc of Austin

Apr 27, 2013

Investors Silverton Partners and Sevin Rosen Funds have sold their stakes in Javelin Semiconductor Inc of Austin, TX, USA, which was one of the first firms to develop 3G wireless communications power amplifiers (PAs) based on ...

Tags: CMOS PAs, Electronics

Japan Has Developed a Gan-Based Power Transistor with a Blocking Voltage of 600V

Apr 9, 2013

Panasonic Corp of Osaka, Japan has developed a GaN-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The firm claims that its design will for ...

Tags: Panasonic, GaN Power Transistor

Panasonic Announced The Development of a GaN

Apr 8, 2013

Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...

Tags: switching operations, GaN, power transistor

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